Method for manufacturing semiconductor device and semiconductor device

ABSTRACT

There is provided a method for manufacturing a semiconductor device comprising: forming a first organic insulating layer on a semiconductor region; forming a bump base film including an edge portion contacting with the first organic insulating layer; performing heat treatment of the bump base film; and forming a second organic insulating layer so as to cover the edge portion of the bump base film and the first organic insulating layer around the bump base film while contacting with the first organic insulating layer, the second organic insulating layer being provided with a first opening that exposes a surface of the bump base film.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2019-035719, filed on Feb. 28, 2019, theentire contents of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a method for manufacturing asemiconductor device and a semiconductor device.

BACKGROUND

JP2005-150578A and JP2017-228583A disclose technologies related tomethods for manufacturing a semiconductor device. In the methoddisclosed in JP2005-150578A, a rewiring is formed of conductive films (aTi film and a Pd film from the layer at the bottom) used as base films(under bump metal (UBM) films) of an Au bump. The Ti film and the Pdfilm are formed using a sputtering method. When resistance in a rewiringbecomes a problem, an Au film is formed on the Pd film, therebyrealizing a rewiring structure having the Ti film, the Pd film, and theAu film from the layer at the bottom.

The method disclosed in JP2017-228583A includes a step of forming afirst metal layer, a step of forming a cover film, and a step of forminga second metal layer. In the step of forming the cover film, the coverfilm formed of any of Cu, Ti, Al, Mg, and Cr is formed in a region of anouter circumference of the first metal layer. In the step of forming thesecond metal layer, having the first metal layer as a seed metal,electroless plating treatment is performed with respect to a metaldifferent from a material constituting the cover film and selected fromNi, Pd, and Al. The second metal layer is positioned on an upper surfaceof the first metal layer and does not extend to an outward side of thecover film.

SUMMARY

The present disclosure provides a method for manufacturing asemiconductor device. This method comprises: forming a first organicinsulating layer on a semiconductor region; forming a bump base filmincluding an edge portion contacting with the first organic insulatinglayer; performing heat treatment of the bump base film; and forming asecond organic insulating layer so as to cover the edge portion of thebump base film and the first organic insulating layer around the bumpbase film while contacting with the first organic insulating layer. Thesecond organic insulating layer is provided with a first opening thatexposes a surface of the bump base film.

The present disclosure provides a semiconductor device. Thesemiconductor device comprises a semiconductor region, a first organicinsulating layer, a bump base film, a second organic insulating layer,and a solder bump. The first organic insulating layer is provided on thesemiconductor region. The bump base film includes an edge portionpositioned on the first organic insulating layer. The second organicinsulating layer is provided so as to cover the edge portion of the bumpbase film and the first organic insulating layer around the bump basefilm while contacting with the first organic insulating layer. Thesecond organic insulating layer is provided with a first opening thatexposes a surface of the bump base film. The solder bump covers thefirst opening and contacts with the bump base film.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view illustrating a semiconductor device according toan embodiment.

FIG. 2 is an enlarged view illustrating a cross section of a basestructure of a solder bump along line II-II illustrated in FIG. 1.

FIGS. 3A, 3B, and 3C are cross-sectional views illustrating each ofsteps in a method for manufacturing the semiconductor device illustratedin FIG. 1.

FIGS. 4A, 4B, and 4C are cross-sectional views illustrating each of thesteps in the method for manufacturing the semiconductor device.

FIGS. 5A and 5B are cross-sectional views illustrating each of the stepsin the method for manufacturing the semiconductor device.

FIG. 6 is a view for describing an effect achieved by the semiconductordevice and the method for manufacturing the semiconductor deviceaccording to the embodiment.

FIG. 7 is a cross-sectional view illustrating a step according to amodification example.

FIG. 8 is a cross-sectional view illustrating a state where an organicinsulating layer is formed in the modification example.

FIGS. 9A and 9B are views for describing an effect achieved by amanufacturing method according to the modification example.

FIG. 10A is an enlarged cross-sectional view illustrating a part of astructure of a comparative example of the semiconductor device disclosedin JP2017-228583A. FIG. 10B is an enlarged cross-sectional viewillustrating a part in FIG. 10A.

DETAILED DESCRIPTION

[Problem to be Solved by the Present Disclosure]

A package of a ball grid array (BGA) can be used for performingflip-chip mounting of a semiconductor device on a substrate or the like.A solder bump is formed on a wiring layer of such a semiconductor device(for example, refer to JP2005-150578A JP2017-228583A). In order to curbmutual diffusion of a metal material between a solder and a wiringlayer, a bump base film (UBM film) is provided between a wiring layerand a solder bump. For example, an organic insulating layer such as apolyimide film is provided on a semiconductor region as an interlayerfilm of the wiring layer.

Due to the difference between the coefficients of thermal expansion ofan organic insulating material such as polyimide and a metal material,the bump base film may easily peel off from the organic insulating layerbecause of thermal stress or the like generated at the time of solderball mounting. When a gap is generated between the bump base film andthe organic insulating layer, a solder may infiltrate into the gap. Ifthe solder infiltrates, a fracture is likely to occur on a boundarysurface between the bump base film and the wiring layer, so that thereliability of the semiconductor device deteriorates.

[Effects of the Present Disclosure]

The present disclosure provides a method for manufacturing asemiconductor device and a semiconductor device, in which thereliability can be improved by reducing infiltration of a solder into agap between a bump base film and an organic insulating layer.

DESCRIPTION OF EMBODIMENT OF PRESENT DISCLOSURE

Specific examples of the method for manufacturing a semiconductor deviceand the semiconductor device of the present disclosure will be describedbelow with reference to the drawings. The present invention is notlimited to these examples. The present invention is indicated by theclaims, and it is intended to include all changes within meanings and arange equivalent to the claims. In the following description, the samereference signs are applied to the same elements in description of thedrawings, and duplicate description will be omitted.

FIG. 1 is a plan view illustrating a semiconductor device 1A accordingto an embodiment. As illustrated in FIG. 1, the semiconductor device 1A,which is a BGA semiconductor device, comprises a semiconductor region 10and a plurality of solder bumps 17 provided on a surface of thesemiconductor region 10. The plurality of solder bumps 17 are disposedon the surface of the semiconductor region 10 in a planarly dispersedmanner. For example, the solder bumps 17 are substantially sphericalstructures constituted of metals such as alloys of tin and silver(Sn—Ag).

For example, when the semiconductor device 1A is a high electronmobility transistor (HEMT) constituted of a gallium nitride (GaN)-basedsemiconductor, the semiconductor region 10 includes a GaN channel layerand an AlGaN barrier layer (or an InAlN barrier layer). Thesemiconductor region 10 may include a field effect transistor (FET)other than an HEMT or a semiconductor layer for a semiconductorfunctioning device other than those.

A ground wiring region 11 and signal wiring regions 12 are provided onthe surface of the semiconductor region 10. The ground wiring region 11is provided substantially throughout the entire surface of thesemiconductor region 10. The planar shape of the ground wiring region 11is substantially similar to the planar shape of the semiconductor device1A and is a substantially rectangular shape, in an example. N (five inthe example illustrated in FIG. 1) semicircular cutouts 11 c are formedin a pair of side 11 a and 11 b of the ground wiring region 11 facingeach other in a certain direction, and each of the signal wiring regions12 is provided on the inward side of each of the cutouts 11 c. Theplanar shape of each of the signal wiring regions 12 is a circularshape, for example. The ground wiring region 11 and each of the signalwiring regions 12 are isolated from each other, and semi-annular gapregions 13 are provided between the ground wiring region 11 and thesignal wiring regions 12. In the example illustrated in FIG. 1, twosignal wiring regions 12 are disposed side by side along one side 11 aof the ground wiring region 11, and three signal wiring regions 12 aredisposed side by side along the other side 11 b of the ground wiringregion 11.

The plurality of solder bumps 17 include M (12 in the exampleillustrated in FIG. 1) ground solder bumps 17 a and N signal solderbumps 17 b. The M ground solder bumps 17 a are arranged in atwo-dimensional shape in a row direction and a column directionorthogonal to each other in the ground wiring region 11. The N signalsolder bumps 17 b are respectively provided on the signal wiring regions12. Some (two in the example illustrated in FIG. 1) of the N signalsolder bumps 17 b are arranged along the side 11 a of the ground wiringregion 11, and the others (three in the example illustrated in FIG. 1)are arranged along the side 11 b of the ground wiring region 11.

FIG. 2 is an enlarged view illustrating a cross section of a basestructure of the solder bump 17 along line II-II illustrated in FIG. 1.As illustrated in FIG. 2, the semiconductor device 1A includes metalwirings 21 provided on the surface of the semiconductor region 10 and anorganic insulating layer 31 provided on the surface of the semiconductorregion 10. Moreover, the semiconductor device 1A includes metal films 22and 23, a bump base film 26, and an organic insulating layer 32. In FIG.2, illustration of the semiconductor region 10 and the solder bumps 17illustrated in FIG. 1 is omitted.

The metal wirings 21 are signal wirings provided on an inorganicinsulating layer (for example, a SiN layer or a SiO₂ layer) on thesemiconductor region 10. The metal wirings 21 are connected toelectrodes (for example, a source electrode and a drain electrode)brought into ohmic contact with the semiconductor region 10, or anelectrode (for example, a gate electrode) brought into Schottky contactwith the semiconductor region 10. For example, the metal wirings 21 areconstituted of a metal such as gold (Au). The thickness of each of themetal wirings 21 may be within a range of 0.5 μm to 3.0 μm and is 1 μmin an example.

The organic insulating layer 31 is an interlayer film of a dielectricsubstance provided between wiring layers. The organic insulating layer31 is mainly formed of a resin and is formed of polyimide, in anexample. The organic insulating layer 31 is provided throughout theentire surface of the semiconductor region 10 and covers the inorganicinsulating layer and the metal wirings 21. The organic insulating layer31 has openings 31 a for exposing a part of the metal wirings 21 on themetal wirings 21. When viewed in a thickness direction of thesemiconductor region 10, the openings 31 a overlap the signal solderbumps 17 b (refer to FIG. 1). The thickness of the organic insulatinglayer 31 may be within a range of 1 μm to 6 μm.

The metal film 22 functions as ground wirings. The metal films 23function as signal wirings. The metal films 22 and 23 are provided onthe organic insulating layer 31 and are formed of metals such as gold(Au), for example. The metal film 22 is provided on the ground wiringregion 11 illustrated in FIG. 1, and the planar shape of the metal film22 coincide with the planar shape of the ground wiring region 11.Specifically, the metal film 22 is provided substantially throughout theentire surface of the semiconductor region 10. The planar shape of themetal film 22 is substantially similar to the planar shape of thesemiconductor device 1A and is substantially rectangular shape, in anexample. In a pair of sides of the metal film 22 facing each other in acertain direction, semicircular cutouts corresponding to the cutouts 11c illustrated in FIG. 1 are formed, and each of the metal films 23 isprovided on the inward side of each of the cutouts. Each of the metalfilms 23 is provided on each of the signal wiring regions 12 illustratedin FIG. 1, and the planar shape of each of the metal films 23 coincideswith the planar shape of each of the signal wiring regions 12. The metalfilm 22 and the metal films 23 are separated from each other, and adistance dl between the metal film 22 and the metal films 23 is within arange of 50 μm to 300 μm, for example. The metal films 23 fill theopenings 31 a formed in the organic insulating layer 31, completelycover the openings 31 a, and are connected to the metal wirings 21through the openings 31 a. The thickness of each of the metal films 22and 23 may be within a range of 0.5 μm to 5.0 μm and is 2 μm, in anexample.

The bump base film 26 is constituted to include a part 26 a provided onthe metal film 22 and covering the metal film 22, and parts 26 bprovided on the metal films 23 and covering the metal films 23. In thepresent embodiment, the part 26 a covers an upper surface and a sidesurface of the metal film 22, and an edge portion 26 c of the part 26 ais positioned on the organic insulating layer 31 around the metal film22 and comes into contact with the organic insulating layer 31. Each ofthe parts 26 b covers an upper surface and a side surface of each of themetal films 23, and an edge portion 26 d of each of the parts 26 b ispositioned on the organic insulating layer 31 around the metal film 23and comes into contact with the organic insulating layer 31. The part 26a and the respective parts 26 b are separated from each other with thegap region 13 (refer to FIG. 1) sandwiched therebetween.

The bump base film 26 is constituted mainly to include a seed metal film24 and a main film 25 provided on the seed metal film 24. For example,the seed metal film 24 mainly includes metals such as titanium (Ti) andpalladium (Pd). In an example, the seed metal film 24 includes Ti layersrespectively provided on the metal films 22 and 23, and Pd layersprovided on the Ti layers. In this case, the thickness of the Ti layermay be within a range of 5 nm to 100 nm and is 5 nm, in an example. Thethickness of the Pd layer may be within a range of 10 nm to 500 nm andis 10 nm, in an example. The seed metal film 24 is used as a seed metalwhen the main film 25 is formed through electroless plating treatment.When the main film 25 includes Ni (or NiCr) and the metal wirings 21include Au, the seed metal film 24 hinders Ni (or NiCr) and Au formingan alloy.

The main film 25 is a metal film provided on the seed metal film 24 andcomes into contact with the seed metal film 24. For example, the mainfilm 25 mainly includes a metal such as nickel (Ni) or a nickel-chromealloy (NiCr). The main film 25 is provided to prevent mutual diffusionof a solder constituting the solder bump 17 and gold (Au) constitutingthe metal wirings 21. When the main film 25 is a Ni layer, for example,the thickness of the Ni layer is within a range of 3 μm to 6 μm. An edgeportion 25 c of the main film 25 protrudes from the seed metal film 24.The edge portion 25 c may be provided with a gap in the thicknessdirection with respect to the organic insulating layer 31 or may comeinto contact with the organic insulating layer 31.

For example, the organic insulating layer 32 mainly includes aphotosensitive resin. For example, the photosensitive resin isphotosensitive polyimide. In an example, the organic insulating layer 32is formed of the same material as the organic insulating layer 31. Theorganic insulating layer 32 is provided over at least from the edgeportions 26 c and 26 d of the bump base film 26 to the organicinsulating layer 31 around the bump base film 26 and comes into contactwith the organic insulating layer 31. In the present embodiment, theorganic insulating layer 32 is provided throughout the entire surface ofthe semiconductor region 10 and covers the organic insulating layer 31exposed from the bump base film 26. The organic insulating layer 32 hasopenings 32 a for exposing the part 26 a of the bump base film 26 andopenings 32 b for exposing the parts 26 b of the bump base film 26. Whenviewed in the thickness direction of the semiconductor region 10, theopenings 32 a overlap the ground solder bumps 17 a (refer to FIG. 1) andthe openings 32 b overlap the signal solder bumps 17 b (refer to FIG.1). The ground solder bumps 17 a cover the openings 32 a and come intocontact with the main film 25 of the part 26 a of the bump base film 26through the openings 32 a. The signal solder bumps 17 b cover theopenings 32 b and comes into contact with the main film 25 of the parts26 b of the bump base film 26 through the openings 32 b. For example,the thickness of the organic insulating layer 32 is within a range of1.0 μm to 10.0 μm.

Subsequently, the method for manufacturing the semiconductor device 1Adescribed above will be described. First, the semiconductor region 10 isepitaxially grown on a substrate. For example, this is grown using ametal organic chemical vapor deposition (MOCVD) method. Next, electrodes(for example, a gate electrode, a source electrode, and a drainelectrode) are formed on the semiconductor region 10. For example, theelectrodes are formed by forming a resist mask having openings on thesemiconductor region 10, performing vapor deposition of a metal whichbecomes an electrode material inside the openings of the resist mask andon the resist mask, and removing the metal on the resist mask togetherwith the resist mask (that is, performing lifting off). Subsequently, aninorganic insulating layer (for example, a SiN layer) is formed on thesemiconductor region 10. The inorganic insulating layer can be formed bya plasma CVD method, for example.

FIGS. 3A to 3C, 4A to 4C, and 5A and 5B are cross-sectional viewsillustrating each of steps after formation of the inorganic insulatinglayer in the method for manufacturing the semiconductor device 1A.Subsequent to the foregoing steps, as illustrated in FIG. 3A, the metalwirings 21 each having a predetermined planar pattern are formed on theinorganic insulating layer by an electro-plating method, for example. Atthis time, the metal wirings 21 and the electrodes are connected to eachother via the openings formed in the inorganic insulating layerinterposed therebetween.

Subsequently, the organic insulating layer 31 is formed on the surfaceof the semiconductor region 10 on which the metal wirings 21 areprovided. For example, the organic insulating layer 31 is formed byperforming spin coating of a material (for example, polyimide) of theorganic insulating layer 31 on the semiconductor region 10. Further, theopenings 31 a are formed to expose the metal wirings 21 by forming amask having opening patterns corresponding to the openings 31 a on theorganic insulating layer 31 and etching the organic insulating layer 31with this mask interposed therebetween. For example, a material of themask is SiN or SiO₂. The openings of the mask are formed using aphotolithography technology or an electron beam lithography technology,for example. The openings 31 a can be formed by dry etching usingplasma.

Subsequently, as illustrated in FIG. 3B, the metal films 22 and 23 eachhaving a predetermined planar pattern are formed on the organicinsulating layer 31 by an electro-plating method, for example. In thisstep, the metal film 22 is formed in the ground wiring region 11illustrated in FIG. 1, and each of the metal films 23 is formed in eachof the signal wiring regions 12. At this time, the metal films 23 areconnected to the metal wirings 21 with the openings 31 a of the organicinsulating layer 31 interposed therebetween.

Subsequently, as illustrated in FIG. 3C, the seed metal film 24 isformed on the entire surface of the semiconductor region 10, and theupper surface and the side surface of the metal film 22, the uppersurface and the side surface of each of the metal films 23, and asurface of the organic insulating layer 31 exposed from the metal films22 and 23 are covered by the seed metal film 24. The seed metal film 24is formed by a sputtering method, for example. In an example, a Ti layerhaving a thickness of 5 nm is formed by the sputtering method.Thereafter, a Pd layer having a thickness of 10 nm is formed on the Tilayer by the sputtering method. The seed metal film 24 formed in thismanner includes a part 24 a covering the metal film 22, parts 24 bcovering the metal films 23, and a part 24 c positioned on the organicinsulating layer 31.

Subsequently, as illustrated in FIG. 4A, a photoresist R is formed onthe seed metal film 24. The photoresist R has an opening Ra on the part24 c and exposes only the part 24 c through the opening Ra. Thephotoresist R is a negative resist, for example. In such a case, thenegative resist is applied on the seed metal film 24 and other regionsexcluding the region corresponding to the opening Ra are subjected toexposure and development, so that only the region corresponding to theopening Ra which has not been subjected to exposure can be removed. Thephotoresist R covers the parts 24 a and 24 b of the seed metal film 24and covers a part of the part 24 c adjacent to a circumferential edgeportion of each of the parts 24 a and 24 b. Further, the part 24 c ofthe seed metal film 24 exposed from the opening Ra of the photoresist Ris removed through etching. Etching is wet etching, for example, usingan iodine etchant (product name “AURUM” series, manufactured by KANTOCHEMICAL CO., INC.) or dry etching such as reactive ion etching (RIE).Accordingly, the part 24 a and the part 24 b of the seed metal film 24are separated from each other. An edge portion of the seed metal film 24which is positioned on the organic insulating layer 31 and comes intocontact with the organic insulating layer 31 remains around the parts 24a and 24 b. Thereafter, the photoresist R is removed.

Subsequently, as illustrated in FIG. 4B, the parts 26 a and 26 b of thebump base film 26 are formed by forming the main film 25 on the seedmetal film 24. In this step, the main film 25 is formed by anelectroless plating method for causing the seed metal film 24 to be aseed metal. For example, the main film 25 is formed by electrolessplating treatment (for example, autocatalysis electroless platingtreatment) having hypophosphite for autocatalysis plating as a catalyst.The reason for using electroless plating is that it has more excellentreliability than electro-plating. Since the seed metal film 24 isprovided restrictedly in the parts 24 a and 24 b, this electrolessplating becomes selective plating, so that the main film 25 growsrestrictedly on the part 24 a and on the part 24 b. Since the main film25 also grows in a transverse direction, the edge portions 25 cprotruding from the seed metal film 24 are formed in the main film 25.

Electroless plating is a method for performing plating without using anexternal power source, and there are substitution plating using anionization tendency, autocatalysis electroless plating (reductionplating) using a reductant, substitution reduction plating in whichthese are combined, and the like. Here, autocatalysis electrolessplating is used, but other types of electroless plating may be used. Onthe other hand, electro-plating is a method for performing plating inwhich electrons are applied from a cathode by causing a current to flowbetween the electrodes using an external power source.

Subsequently, a Au film is formed on the main film 25. The Au film isformed using electroless plating treatment, electro-plating treatment, avapor deposition-lifting off method, or a sputtering method for example.The thickness of the Au film is 10 μm, for example.

Subsequently, as illustrated in FIG. 4C, a product including the bumpbase film 26 is installed inside a heat treatment furnace Q, and heattreatment of the bump base film 26 is performed. A heat treatmenttemperature is a temperature higher than a reflow temperature of thesolder bumps 17 formed in a constitution thereafter and is within arange of 260° C. to 350° C., for example. A heat treatment time may bewithin a range of 5 minutes to 60 minutes and is 30 minutes, in anexample. For example, an atmosphere for heat treatment is atmosphericair (mixed atmosphere of nitrogen (N₂) and oxygen (O₂)), a vacuumatmosphere, or an inert gas atmosphere of argon (Ar) or helium (He).

Subsequently, as illustrated in FIG. 5A, the organic insulating layer 32is formed on the surface of the semiconductor region 10 on which thebump base film 26 is formed. As described above, the organic insulatinglayer 32 is provided over at least from the edge portions 26 c and 26 dof the bump base film 26 to the organic insulating layer 31 around thebump base film 26 and comes into contact with the organic insulatinglayer 31. Similar to the organic insulating layer 31, for example, theorganic insulating layer 32 is formed by performing spin coating of amaterial (for example, photosensitive polyimide) of the organicinsulating layer 32 on the bump base film 26 and on the organicinsulating layer 31 exposed from the bump base film 26. Further, theorganic insulating layer 32 is subjected to exposure and developmentusing a photomask having the opening patterns corresponding to theopenings 32 a and 32 b, so that the openings 32 a and 32 b are formedand surfaces of the parts 26 a and 26 b of the bump base film 26 areexposed.

Subsequently, as illustrated in FIG. 5B, the solder bumps 17 are formed.That is, the ground solder bumps 17 a covering the openings 32 a andcoining into contact with the part 26 a of the bump base film 26, andthe signal solder bumps 17 b covering the openings 32 b and coining intocontact with the parts 26 b of the bump base film 26 are formed. In thisstep, after a flux is applied, the solder bumps 17 having sizes such asa diameter of 160 pin, for example, are formed by a reflow (that is,heat treatment) at a temperature of 250° C., for example. The Au filmformed on the seed metal film 24 is diffused substantially inside thesolder bumps 17 in this step. Thereafter, the flux is cleaned. Throughthe foregoing steps, the semiconductor device 1A of the presentembodiment illustrated in FIGS. 1 and 2 is produced.

Effects achieved by the method for manufacturing the semiconductordevice 1A according to the present embodiment described above will bedescribed together with problems of manufacturing methods in the relatedart. FIG. 10A is an enlarged cross-sectional view illustrating a part ofa structure of a comparative example of the semiconductor devicedisclosed in JP2017-228583A. A metal wiring 120 constituted of Au, forexample, is provided on a semiconductor region 110 mainly including anitride semiconductor, and the metal wiring 120 is covered by aninorganic insulating layer 141 protecting the semiconductor region 110.For example, the inorganic insulating layer 141 is a silicon compoundfilm of SiN or the like. An organic insulating layer 133 formed of aresin such as polyimide, for example, is provided on the inorganicinsulating layer 141. Openings 141 a and 133 a penetrating the inorganicinsulating layer 141 and the organic insulating layer 133 in thethickness direction are formed therein, and these openings 141 a and 133a are filled with a metal wiring 121 constituted of Au, for example. Themetal wiring 121 is connected to the metal wiring 120 through theopenings 141 a and 133 a. An inorganic insulating layer 142 and anorganic insulating layer 131 are laminated on the organic insulatinglayer 133. For example, the inorganic insulating layer 142 is a siliconcompound film of SiN or the like. The organic insulating layer 131 isformed of a resin such as polyimide. Openings 142 a and 131 a of theinorganic insulating layer 142 and the organic insulating layer 131 areformed on the metal wiring 121, and a seed metal film 124 is provided onthe side surface of each of the openings 142 a and 131 a and on asurface of the metal wiring 121 exposed from the openings 142 a and 131a. The seed metal film 124 is constituted of Ti and Pd, for example. Amain film 125 in which the seed metal film 124 is plating-formed as aseed metal is provided on the seed metal film 124. The main film 125 isconstituted of Ni and Au, for example. The seed metal film 124 and themain film 125 constitute a bump base film 126. A circumferential edgeportion of the bump base film 126 comes into contact with a surface ofthe organic insulating layer 131. A solder bump is formed on the bumpbase film 126.

When the solder bump is formed through a reflow in the above structure,or when the above semiconductor device after forming the solder bump ismounted on a wiring substrate through a reflow, there are cases wherethe circumferential edge portion of the bump base film 126 peels offfrom the organic insulating layer 131 due to the difference between thecoefficients of thermal expansion of an organic insulating material suchas polyimide and a metal material, as illustrated in FIG. 10B. When agap G is generated between the bump base film 126 and the organicinsulating layer 131, a solder may infiltrate into this gap G and thissolder may fracture a boundary surface between the bump base film 126and the metal wiring 121.

In respect to this problem, the method for manufacturing thesemiconductor device 1A of the present embodiment includes a step offorming the organic insulating layer 31 on the semiconductor region 10,a step of forming the bump base film 26, a step of performing heattreatment of the bump base film 26, and a step of forming the organicinsulating layer 32. In the step of forming the bump base film 26, thebump base film 26 including the edge portions 26 c and 26 d positionedon the organic insulating layer 31 is formed. In the step of forming theorganic insulating layer 32, the organic insulating layer 32 providedover at least from the edge portions 26 c and 26 d of the bump base film26 to the organic insulating layer 31 around the bump base film 26,coining into contact with the organic insulating layer 31, and havingthe openings 32 a and 32 b for exposing a surface of the bump base film26, is formed.

The semiconductor device 1A of the present embodiment includes thesemiconductor region 10, the organic insulating layer 31 provided on thesemiconductor region 10, the bump base film 26 including the edgeportions 26 c and 26 d positioned on the organic insulating layer 31,the organic insulating layer 32, and the solder bumps 17 coining intocontact with the bump base film 26. The organic insulating layer 32 isprovided over at least from the edge portions 26 c and 26 d of the bumpbase film 26 to the organic insulating layer 31 around the bump basefilm 26 and comes into contact with the organic insulating layer 31. Theorganic insulating layer 32 has the openings 32 a and 32 b for exposingthe surface of the bump base film 26. The ground solder bumps 17 a coverthe openings 32 a and comes into contact with the bump base film 26, andthe signal solder bumps 17 b cover the openings 32 b and comes intocontact with the bump base film 26.

FIG. 6 is a view for describing an effect achieved by the semiconductordevice 1A and the method for manufacturing the semiconductor deviceaccording to the present embodiment. In the present embodiment, heattreatment of the bump base film 26 is performed after the bump base film26 is formed. At this time, the bump base film 26 peels off from theorganic insulating layer 31 (part A in FIG. 6) in a part in which ajoining strength between the bump base film 26 and the organicinsulating layer 31 is low, due to stress caused by the differencebetween the coefficients of thermal expansion. When the bump base film26 and the exposed organic insulating layer 31 are covered by theorganic insulating layer 32 in a step thereafter, a material of theorganic insulating layer 32 enters a gap between the bump base film 26and the organic insulating layer 31.

In this manner, the present embodiment peels off the part in which thejoining strength between the bump base film 26 and the organicinsulating layer 31 is low in advance before a reflow of the solderbumps 17. The gap generated as a result thereof is filled with thematerial of the organic insulating layer 32 in advance. Accordingly,internal stress of the bump base film 26 is released, and generation ofthe gap between the bump base film 26 and the organic insulating layer31 due to heat during a reflow of the solder bumps 17 can be reduced.Thus, infiltration of the solder into the gap between the bump base film26 and the organic insulating layer 31 is reduced, so that thereliability of the semiconductor device 1A can be improved.

In the present embodiment, the organic insulating layer 32 may mainlyinclude a photosensitive resin, and the step of forming the organicinsulating layer 32 may include a step of forming the openings 32 a and32 b by performing exposure and development of the organic insulatinglayer 32. Regarding the organic insulating layer 32, the openings 32 aand 32 b are generally formed through etching. However, when aphotosensitive resin is used, the openings 32 a and 32 b are formed inthe step of exposure and development, so that an etching step can beomitted.

In the present embodiment, the method for manufacturing thesemiconductor device 1A may include a step of forming the solder bumps17 by a reflow process to cover the openings 32 a and 32 b and come intocontact with the bump base film 26. As described above, according to themanufacturing method of the present embodiment, generation of the gapbetween the bump base film 26 and the organic insulating layer 31 due toheat during the reflow process of the solder bumps 17 can be reduced.Thus, the reliability of the semiconductor device 1A when the solderbumps 17 is subjected to form by the reflow process can be improved.

In the present embodiment, in the heat treatment step of the bump basefilm 26, the heat treatment may be performed at a temperature higherthan the reflow temperature of the solder bumps 17. Accordingly, a placewhere peeling of the bump base film 26 and the organic insulating layer31 can occur at the reflow temperature of the solder bumps 17 can bereliably peeled off before a reflow. Thus, the reliability of thesemiconductor device 1A can be further improved.

In the present embodiment, the metal films 22 and 23 in their entiretymay be covered by the bump base film 26. Accordingly, the area of thebump base film 26 increases, and contact between the solder and themetal films 22 and 23 can be further reduced.

Modification Example

FIG. 7 is a cross-sectional view illustrating a step according to amodification example of the foregoing embodiment. This step is performedafter the heat treatment of the bump base film 26 illustrated in FIG. 4Cis performed and before the organic insulating layer 32 illustrated inFIG. 5A is formed. In this step, a part of the organic insulating layer31 exposed from the bump base film 26 is etched (arrow E in FIG. 7) toform a recessed portion 31 b depressed from the surface of the organicinsulating layer 31 in the part. The etching is reactive ion etching(RIE) using O₂ plasma, for example. The depth of the recessed portion 31b from the surface of the organic insulating layer 31 may be half orsmaller than the thickness of the organic insulating layer 31. Forexample, when the thickness of the organic insulating layer 31 is 2 μm,the depth of the recessed portion 31 b is 1 μm or smaller. FIG. 8 is across-sectional view illustrating a state where the organic insulatinglayer 32 is formed after the foregoing step. As illustrated in FIG. 8,the organic insulating layer 32 fills the recessed portion 31 b.

When the heat treatment of the bump base film 26 is performed and aminute gap is generated between the bump base film 26 and the organicinsulating layer 31, depending on the size of the gap, there is concernthat a constituent material of the organic insulating layer 32 may notenter the gap due to the viscosity of the constituent material. In sucha case, if the organic insulating layer 31 is etched as in the presentmodification example, the gap between the bump base film 26 and theorganic insulating layer 31 can be expanded as illustrated in a part Bin FIG. 9A. Further, as illustrated in a part C in FIG. 9B, when theorganic insulating layer 32 is formed, the constituent material of theorganic insulating layer 32 easily enters the gap. Thus, the gap can beeasily filled with the constituent material of the organic insulatinglayer 32, so that infiltration of the solder into the gap can be moreeffectively reduced, and the reliability of the semiconductor device 1Acan be further improved.

The method for manufacturing a semiconductor device and thesemiconductor device of the present disclosure are not limited to theembodiment described above, and various other modifications can beperformed. For example, in the foregoing embodiment, an HEMT has beendescribed as an example of a semiconductor region. However, the presentdisclosure is not limited to an HEMT, and can be applied to varioussemiconductor devices including a metal wiring and a solder bump.

What is claimed is:
 1. A method for manufacturing a semiconductor devicecomprising: forming a first organic insulating layer on a semiconductorregion; forming a bump base film including an edge portion contactingwith the first organic insulating layer; performing heat treatment ofthe bump base film; and forming a second organic insulating layer so asto cover the edge portion of the bump base film and the first organicinsulating layer around the bump base film while contacting with thefirst organic insulating layer, the second organic insulating layerbeing provided with a first opening that exposes a surface of the bumpbase film.
 2. The method for manufacturing a semiconductor deviceaccording to claim 1, wherein the heat treatment of the bump base filmis performed before the forming of the second organic insulating layer.3. The method for manufacturing a semiconductor device according toclaim 1, further comprising: etching the first organic insulating layerafter the performing of the heat treatment and before the forming of thesecond organic insulating layer.
 4. The method for manufacturing asemiconductor device according to claim 3, wherein a recessed portiondepressed from a surface of the first organic insulating layer is formedby the etching of the first organic insulating layer.
 5. The method formanufacturing a semiconductor device according to claim 4, wherein adepth of the recessed portion from the surface of the first organicinsulating layer is half or smaller than a thickness of the firstorganic insulating layer.
 6. The method for manufacturing asemiconductor device according to claim 1, wherein the forming of thesecond organic insulating layer includes forming the first opening byexposing and developing the second organic insulating layer that mainlyincludes a photosensitive resin.
 7. The method for manufacturing asemiconductor device according to claim 1, further comprising: forming asolder bump by a reflow process so as to cover the first opening andcontact with the bump base film.
 8. The method for manufacturing asemiconductor device according to claim 7, wherein the heat treatment isperformed at a temperature higher than a temperature of the reflowprocess of the solder bump.
 9. The method for manufacturing asemiconductor device according to claim 7, wherein the heat treatment isperformed at a temperature of a range of 260° C. to 350° C.
 10. Themethod for manufacturing a semiconductor device according to claim 1,wherein the heat treatment of the bump base film continues within arange of 5 minutes to 60 minutes.
 11. The method for manufacturing asemiconductor device according to claim 1, wherein the heat treatment ofthe bump base film is performed in an atmospheric air, a vacuumatmosphere, or an inert gas atmosphere.
 12. The method for manufacturinga semiconductor device according to claim 1, further comprising: forminga metal wiring serving as a signal wiring on the semiconductor region,wherein the first organic insulating layer is formed so as to have asecond opening that exposes a surface of the metal wiring in the formingof the first organic insulating layer.
 13. The method for manufacturinga semiconductor device according to claim 12, further comprising:forming a first metal film serving as a ground wiring in a ground wiringregion on the first organic insulating layer; and forming a second metalfilm serving as the signal wiring in a signal wiring region isolatedfrom the ground wiring region so as to connect with the metal wiringthrough the second opening.
 14. The method for manufacturing asemiconductor device according to claim 13, wherein a first part of thebump base film covering the first metal film and a second part of thebump base film covering the second metal film are formed separately inthe forming of the bump base film.
 15. The method for manufacturing asemiconductor device according to claim 13, wherein the first metal filmand the second metal film in their entirety are covered by the bump basefilm in the forming of the bump base film.
 16. A semiconductor devicecomprising: a semiconductor region; a first organic insulating layerprovided on the semiconductor region; a bump base film including an edgeportion positioned on the first organic insulating layer; a secondorganic insulating layer provided so as to cover the edge portion of thebump base film and the first organic insulating layer around the bumpbase film while contacting with the first organic insulating layer, thesecond organic insulating layer being provided with a first opening thatexposes a surface of the bump base film; and a solder bump covering thefirst opening and contacting with the bump base film.
 17. Thesemiconductor device according to claim 16, wherein a materialconstituting the second organic insulating layer enters a gap betweenthe first organic insulating layer and the bump base film.
 18. Thesemiconductor device according to claim 16, further comprising: a metalwiring serving as a signal wiring provided on the semiconductor region,wherein the first organic insulating layer has a second opening thatexposes the metal wiring therefrom.
 19. The semiconductor deviceaccording to claim 18, further comprising: a first metal film serving asa ground wiring provided in a ground wiring region on the first organicinsulating layer: and a second metal film serving as the signal wiringprovided in a signal wiring region isolated from the ground wiringregion and connected to the metal wiring through the second opening. 20.The semiconductor device according to claim 19, wherein the bump basefilm includes a first part covering the first metal film, and a secondpart separated from the first part and covering the second metal film.